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相关产品
产品信息
2英寸氮化镓自支撑晶片(2” Free-Standing GaN Substrates)
|
产品型号Item |
GaN-FS-N |
GaN-FS-SI |
|
尺寸Dimensions |
Ф 50.8mm ± 1mm |
|
|
厚度Thickness |
300 ± 25 µm |
|
|
晶体取向Orientation |
C-axis(0001) ± 0.5° |
|
|
主定位边Orientation Flat |
(1-100) ± 0.5°, 16.0 ± 1.0mm |
|
|
次定位边Secondary Orientation Flat |
(11-20) ± 3°, 8.0 ± 1.0mm |
|
|
TTV(Total Thickness Variation) |
≤15 µm |
|
|
弯曲度BOW |
≤20 µm |
|
|
导电类型Conduction Type |
N-type |
Semi-Insulating |
|
电阻率Resistivity(300K) |
< 0.5 Ω·cm |
>106Ω·cm |
|
位错密度Dislocation Density |
Less than 5x106cm-2 |
|
|
有效面积Useable Surface Area |
> 90% |
|
|
抛光Polishing |
Front Surface: Ra < 0.2nm. Epi-ready polished |
|
|
Back Surface: Fine ground |
||
2英寸氮化镓厚膜晶片2” GaN Templates
|
产品型号Item |
GaN-T-N |
GaN-T-S |
|
尺寸Dimensions |
Ф 2” |
|
|
厚度Thickness |
15 µm, 20 µm, 30 µm, 40 µm |
30 µm, 90 µm |
|
晶体取向Orientation |
C-axis(0001) ± 1° |
|
|
导电类型Conduction Type |
N-type |
Semi-Insulating |
|
电阻率Resistivity(300K) |
< 0.05 Ω·cm |
﹥106Ω·cm |
|
位错密度Dislocation Density |
Less than 1x108cm-2 |
|
|
衬底结构Substrate structure |
Thick GaN on Sapphire(0001) |
|
|
有效面积Useable Surface Area |
> 90% |
|
|
抛光Polishing |
Standard: SSP |
|
|
Option: DSP |
||
定制尺寸氮化镓自支撑晶片Free-standing GaN Substrates (Customized size)
|
产品型号Item |
GaN-FS-10 |
GaN-FS-15 |
|
尺寸Dimensions |
10.0mm×10.5mm |
14.0mm×15.0mm |
|
厚度Thickness |
Rank 300 |
300 ± 25 µm |
|
Rank 350 |
350 ± 25 µm |
|
|
Rank 400 |
400 ± 25 µm |
|
|
晶体取向Orientation |
C-axis(0001) ± 0.5° |
|
|
TTV(Total Thickness Variation) |
≤15 µm |
|
|
弯曲度BOW |
≤20 µm |
|
|
导电类型Conduction Type |
N-type |
Semi-Insulating |
|
电阻率Resistivity(300K) |
< 0.5 Ω·cm |
>106Ω·cm |
|
位错密度Dislocation Density |
Less than 5x106cm-2 |
|
|
有效面积Useable Surface Area |
> 90% |
|
|
抛光Polishing |
Front Surface: Ra < 0.2nm. Epi-ready polished |
|
|
Back Surface: Fine ground |
||
非极性氮化镓自支撑衬底（a面和m面）
Non-Polar Freestanding GaN Substrates（a-plane and m-plane）
|
产品型号Item |
GaN-FS-a |
GaN-FS-m |
|
|
尺寸Dimensions |
5.0mm×5.5mm |
||
|
5.0mm×10.0mm |
|||
|
5.0mm×20.0mm |
|||
|
Customized Size |
|||
|
厚度Thickness |
300 ± 25 µm |
||
|
晶体取向Orientation |
a-plane ± 1° |
m-plane ± 1° |
|
|
TTV(Total Thickness Variation) |
≤15 µm |
||
|
弯曲度BOW |
≤20 µm |
||
|
导电类型Conduction Type |
N-type |
||
|
电阻率Resistivity(300K) |
< 0.5 Ω·cm |
||
|
位错密度Dislocation Density |
Less than 5x106cm-2 |
||
|
有效面积Useable Surface Area |
> 90% |
||
|
抛光Polishing |
Front Surface: Ra < 0.2nm. Epi-ready polished |
||
|
Back Surface: Fine ground |
|||
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